Study of thermal treated a-Si implanted with Er and O ions
نویسندگان
چکیده
Visible luminescence of amorphous silicon layers either implanted with Er or co-implanted with Er and O and subsequently annealed in nitrogen has been investigated by cathodoluminescence (CL) in a scanning electron microscope. Co-implanted samples show a more intense luminescence, which is revealed by annealing at lower temperatures than the samples implanted only with erbium. Thermal treatments cause the formation of erbium oxide as well as Er–Si complexes or precipitates. Violet–blue luminescence has been found from CL images and spectra to be related to Er–Si precipitates. Emission in the green–red range is attributed to oxide species.
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